Atomic-level simulation of ferroelectricity in oxide materials

نویسندگان

  • M. Sepliarsky
  • A. Asthagiri
  • M. G. Stachiotti
چکیده

Recent work on using atomic-level simulation methods to study the ferroelectric properties of oxide materials is reviewed. In particular, it is illustrated how such methods can provide insights into the physical properties of a wide range of ferroelectric oxide materials inaccessible by other means. Approaches for further improvements in materials fidelity and increased range of applicability are discussed. 2006 Elsevier Ltd. All rights reserved.

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تاریخ انتشار 2006